WPM4005 single p-channel, -40v, -7.4a, power mosfet descriptions the WPM4005 is p-channel enhancement mos field effect transistor. uses advanced trench technology and desig n to provide excellent r ds (on) with low gate charge. this device is suitable for use in dc-dc conversion, power switch and charging circuit. standard product WPM4005 is pb-free. features z trench technology z supper high density cell design z excellent on resistance for higher dc current z extremely low threshold voltage z small package so-8 applications z driver for relay, solenoid, motor, led etc. z dc-dc converter circuit z power switch z load switch z charging pin configuration (top view) = device code = month(a~z) marking order information device package shipping WPM4005-8/tr so-8 3000/reel&tape v ds (v) rds(on) (
)i d (a) 0.0225@ v gs = " 10v -6.0 -40 0.0285@ v gs = " 4.5v -4.0 d 8 7 6 1 2 3 5 4 1 g s 76 8 234 5 s s d d d 1 of 7 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
absolute maximum ratings parameter symbol 10 s steady state unit drain-source voltage v ds -40 gate-source voltage v gs 25 v t a =25c -7.4 continuous drain current a t a =70c i d -5.9 a t a =25c 2.5 maximum power dissipation a t a =70c p d 1.6 w t a =25c -6.8 continuous drain current b t a =70c i d -5.4 a t a =25c 2.0 maximum power dissipation b t a =70c p d 1.3 w pulsed drain current c i dm -30 operating junction temperature t j 150 lead temperature t l 260 storage temperature range t stg -55 to 150 thermal resistance ratings parameter symbol typical maximum unit t ? 10 s 40 junction-to-ambient thermal resistance a steady state r ja t ? 10 s 65 80 junction-to-ambient thermal resistance b steady state r ja junction-to-case thermal resistance steady state r jc 25 c/w a surface mounted on fr4 board using 1 square inch pad size, 1oz copper b surface mounted on fr4 board using minimum pad size, 1oz copper c repetitive rating, pulse width limited by junction temperature, t p =10s, duty cycle=1% d repetitive rating, pulse width limited by junction temperature t j =150c. a c c c -5.8 -4.7 1.5 1.0 -5.6 -4.5 1.4 1.3 50 48 60 70 86 33 WPM4005 2 of 7 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
electronics characteristics (ta=25 o c, unless otherwise noted) parameter symbol test conditions min typ max unit off characteristics drain-to-source breakdown voltage bv dss v gs = 0 v, i d = -250ua -40 v zero gate voltage drain current i dss v ds =-40 v, v gs = 0v -100 na gate-to-source leakage current i gss v ds = 0 v, v gs = 25v 100 na on characteristics gate threshold voltage v gs(th) v gs = v ds , i d = -250ua -1.0 -1.75 -3.0 v v gs = -10v, i d = -6.0a 22.5 29 drain-to-source on-resistance r ds(on) v gs = -4.5v, i d = -4.0a 28.5 36 m ? forward transconductance g fs v ds = -10 v, i d = -6.0a 14.0 s charges, capacitances and gate resistance input capacitance c iss 2363 output capacitance c oss 161 reverse transfer capacitance c rss v gs = 0 v, f = 1.0 mhz, v ds = - v 134 pf total gate charge q g(tot) 42.6 threshold gate charge q g(th) 3.5 gate-to-source charge q gs 5.3 gate-to-drain charge q gd v gs = - v, v ds = -15 v, i d = -6.0a 9.8 nc switching characteristics turn-on delay time td(on) 14 rise time tr 6.8 turn-off delay time td(off) 76 fall time tf v gs = - v, v ds = -20 v, i d =-1.0a, r g =3.0 ? 7.6 ns body diode characteristics forward voltage v sd v gs = 0 v, i s = -2.0a -0.50 -0.76 -1.5 v WPM4005 3 of 7 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
typical characteristics (ta=25 o c, unless otherwise noted) output characteristics n-resistance vs. drain current on-resistance vs. junction temperature 0123456 0 3 6 9 12 15 t=125 0 c t=-50 0 c 01234 0 10 20 30 40 -i ds _drain to source current (a) -v ds _drain to source voltage (v) v gs =-2.5v v gs =-3v v gs =-4.5v v gs =-6.0v v gs =-10v v ds = -5v -i ds - drain current (a) -v gs - gate to drain voltage (v) transfer characteristics on-resistance vs. gate-to-source voltage threshold voltage vs. temperature 246810 0 40 80 120 160 200 i d =-6a r ds(on) - on-resistance (m : ) -v gs -gate to source voltage(v) 2 4 6 8 1012141618 15 20 25 30 35 40 v gs =-10v t=25 0 c v gs =-4.5v r ds(on) - on-resistance (m : ) -i ds -drain to source current (a) -25 0 25 50 75 100 125 150 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 i ds = -250ua -v gs(th) - threshold voltage (v) temperature ( 0 c) -50 0 50 100 150 10 20 30 40 50 v gs =-10v i ds =-6a r ds(on) - on-resistance (m : ) temperature ( 0 c) WPM4005 4 of 7 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
capacitance single pulse power 0.2 0.4 0.6 0.8 1.0 1 2 3 4 5 t=25 0 c 0 5 10 15 20 25 0 500 1000 1500 2000 2500 3000 3500 crss cout cin c-capacitance (pf) -v ds - drain to source voltage (v) v gs =0 f=1mhz body diode forward voltage safe operating power gate charge characteristics t=150 0 c -i sd - source to drain current (a) -v sd - source to drain voltage(v) 0 1020304050 0 2 4 6 8 10 12 v ds =-30v,i d =-6a -v gs -gate voltage q g (nc) 1 0.1 1 10 100 0.01 10 0.1 t a = 25 c single pulse 1s 10 s limited by r ds(on) * bvdss limited 1ms 10 ms dc 100 ms v ds - drain-to-source voltage (v) i d - drain current (a) 0 20 80 time (s) 40 60 1 1000 10 10 -1 10 -2 100 WPM4005 5 of 7 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
transient thermal response (junction-to-ambient) 10 -3 10 -2 1 10 1000 10 -1 10 -4 100 0.2 0.1 square wave pulse duration (s) normalized effective transient thermal impedance 1 0.1 0.01 t 1 t 2 notes: p dm 1. duty cycle, d = 2. per unit base = r thja =75 c/w 3. t jm -t a =p dm z thja (t) t 1 t 2 4. surface mounted duty cycle = 0.5 single pulse 0.02 0.05 65 WPM4005 6 of 7 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
package outline dimensions so-8 dimensions in millimeter symbol min. typ. max. a 1.350 1.550 1.750 a1 0.100 0.175 0.250 a2 1.350 1.450 1.550 b 0.330 0.420 0.510 c 0.170 0.210 0.250 d 4.700 4.900 5.100 e 3.800 3.900 4.000 e1 5.800 6.000 6.200 e 1.270(bsc) l 0.400 0.835 1.270 ? 0 e 8 e WPM4005 7 of 7 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
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